Topologically Robust Transport of Photons in a Synthetic Gauge Field
Abstract
Electronic transport is localized in low-dimensional disordered media. The addition of gauge fields to disordered media leads to fundamental changes in the transport properties. We implement a synthetic gauge field for photons using silicon-on-insulator technology. By determining the distribution of transport properties, we confirm that waves are localized in the bulk and localization is suppressed in edge states. Our system provides a new platform for investigating the transport properties of photons in the presence of synthetic gauge fields.
Publication Details
- Authors
- Publication Type
- Journal Article
- Year of Publication
- 2014
- Journal
- Physical Review Letters
- Volume
- 113